Geometrical effects on shallow donor impurities in quantum wires

被引：43

作者：

Kasapoglu, E ^{[1
]}

Sari, H

Sokmen, I

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Dept Phys, Izmir, Turkey

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 19卷 / 04期

关键词：

V-shaped quantum wires; impurity binding energy;

D O I：

10.1016/S1386-9477(03)00382-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied theoretically the impurity binding energy for wires of different shapes (V-shaped quantum wire (V-QWR) and rectangular wire) with a variational procedure without using any coordinate transformation. The effective potential for V-QWR used in this work consists of a square well potential in the z-direction and full graded well potential in the x-direction. Our results are in good agreement with previous theoretical results, found by the coordinate transformation method. Furthermore, it is shown that the impurity binding energy in quantum wires is sensitive to the geometrical effects. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：332 / 335

页数：4

共 24 条

[1] Electron relaxation by LO phonons in quantum wires: An adiabatic approach [J].

Amman, C ;

Dupertuis, MA ;

Bockelmann, U ;

Deveaud, B .

PHYSICAL REVIEW B, 1997, 55 (04) :2420-2428

[2] Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires [J].

Chang, K ;

Xia, JB .

PHYSICAL REVIEW B, 1998, 58 (04) :2031-2037

[3] Electron and hole states in V-groove quantum wires: an effective potential calculation [J].

Creci, G ;

Weber, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (08) :690-694

[4] Subband structures and exciton and impurity states in V-shaped GaAs-Ga1-xAlxAs quantum wires [J].

Deng, ZY ;

Chen, XS ;

Ohji, T ;

Kobayashi, T .

PHYSICAL REVIEW B, 2000, 61 (23) :15905-15913

[5] Shallow acceptor impurity states in V-shaped GaAs-Ga1-xAlxAs quantum wires [J].

Deng, ZY ;

Ohji, T ;

Chen, XS .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (13) :3019-3027

[6] Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire [J].

Fu, Y ;

Willander, M ;

Liu, XQ ;

Lu, W ;

Shen, SC ;

Tan, HH ;

Jagadish, C ;

Zou, J ;

Cockayne, DJH .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) :2351-2356

[7] Electronic structure of the ridge quantum wire based on an analytic confinement model [J].

Inoshita, T ;

Sakaki, H .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :269-272

[8]

KALT H, 1996, OPTICAL PROPERTIES 3, P177

[9] ELECTRONIC STATES IN GAAS V-GROOVE QUANTUM-WIRE STRUCTURES WITH SUPERLATTICE BARRIERS [J].

KIENER, C ;

ROTA, L ;

FREYLAND, JM ;

TURNER, K ;

MACIEL, AC ;

RYAN, JF ;

MARTI, U ;

MARTIN, D ;

MORIERGEMOUD, F ;

REINHART, FK .

APPLIED PHYSICS LETTERS, 1995, 67 (19) :2851-2853

[10] INFRARED-ABSORPTION LINE-SHAPES OF SHALLOW DONORS IN CYLINDRICAL QUANTUM-WELL-WIRE STRUCTURES [J].

LATGE, A ;

OLIVEIRA, LE .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) :1328-1330

← 1 2 3 →