Investigation of the function for buffer layer in coated conductors

被引：0

作者：

Wang, Y. ^{[1
,2
]}

Zhou, L. ^{[1
,2
]}

Lu, Y. F. ^{[1
]}

Li, C. S. ^{[1
]}

Yu, Z. M. ^{[1
]}

Jin, L. H. ^{[1
]}

Li, J. S. ^{[2
]}

机构：

[1] NW Inst Nonferrous Met Res, Xian 710016, Peoples R China

[2] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 08期

关键词：

Coated conductors; Buffer layer; Chemical solution deposition; CHEMICAL SOLUTION DEPOSITION; TEXTURED LA2ZR2O7 BUFFER; CEO2; BUFFER; GROWTH; FILMS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the detailed function of La2Zr2O7 (LZO) and CeO2 buffer layer in coated conductors. The results reveal that there is an obvious transformation trend of the orientation for NiO phase from (111) to (00l) in all samples with the increase of oxygen partial pressure in annealing atmosphere. Moreover, it indicates that LZO possesses an effective inhibiting function to the formation of NiO compared with CeO2. Therefore, it can be considered that LZO is often fit for being as barrier layer, while CeO2 is commonly to be as cap layer in multi-layer architecture of buffer layers in coated conductors.

引用

页码：1149 / 1153

页数：5

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