High-efficiency microstructured semiconductor neutron detectors that are arrayed, dual-integrated, and stacked

被引：24

作者：

Bellinger, Steven L. ^{[1
]}

Fronk, Ryan G. ^{[1
]}

Sobering, Timothy J. ^{[2
]}

McGregor, Douglas S. ^{[1
]}

机构：

[1] Kansas State Univ, Dept Mech & Nucl Engn, Manhattan, KS 66506 USA

[2] Kansas State Univ, Elect Design Lab, Manhattan, KS 66506 USA

来源：

APPLIED RADIATION AND ISOTOPES | 2012年 / 70卷 / 07期

关键词：

Semiconductor neutron detectors; Microstructured solid-state neutron detector; He-3 replacement technology; Microstructured diode; Silicon wet-etching; VARIANT DESIGNS; FABRICATION;

D O I：

10.1016/j.apradiso.2012.01.013

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Silicon diodes with large aspect ratio 3D microstructures backfilled with (LiF)-Li-6 show a significant increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology using detector stacking methods and summed-detector 6 x 6-element arraying methods to dramatically increase the sensitivity to thermal neutrons. The intrinsic detection efficiency of the 6 x 6 array for normal-incident 0.0253 eV neutrons was found 6.8% compared against a calibrated He-3 proportional counter. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：1121 / 1124

页数：4

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