Mixed cation phases in sputter deposited HfO2-TiO2 nanolaminates

被引：16
|
作者：
Cisneros-Morales, M. C. [1 ,2 ]
Aita, C. R. [1 ,2 ]
机构：
[1] Univ Wisconsin, Coll Engn & Appl Sci, Adv Coatings Expt Lab, Dept Mat, Milwaukee, WI 53201 USA
[2] Univ Wisconsin, Coll Engn & Appl Sci, Adv Coatings Expt Lab, Surface Studies Lab, Milwaukee, WI 53201 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期
关键词：
D O I：
10.1063/1.2957670
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nanolaminate HfO2-TiO2 films are grown by reactive sputter deposition on unheated fused SiO2, sequentially annealed at 573 to 973 K, and studied by x-ray diffraction. A nanocrystalline structure of orthorhombic (o) HfTiO4 adjacent to an interface followed by monoclinic (m) Hf1-xTixO2 is identified. m-Hf1-xTixO2, a metastable phase, is isomorphous with m-HfO2 and a high pressure phase, m-HfTiO4. A Vegard's law analysis shows that the Ti atomic fraction in m-Hf1-xTixO2 is much greater than Ti equilibrium solubility in m-HfO2. A space group-subgroup argument proposes that m-Hf1-xTixO2 arises from an o/m-HfTiO4 second order phase transition to accommodate the larger Hf atom. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Combinatorial ALD for the growth of ZnO/TiO2 nanolaminates and mixed ZnO/TiO2 nanostructured films
    Doyle, Shona
    Ryan, Louise
    McCarthy, Melissa M.
    Modreanu, Mircea
    Schmidt, Michael
    Laffir, Fathima
    Povey, Ian M.
    Pemble, Martyn E.
    MATERIALS ADVANCES, 2022, 3 (06): : 2896 - 2907
  • [32] Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon
    Ali, Md Hanif
    Pandey, Adityanarayan
    Srinu, Rowtu
    Meihar, Paritosh
    Patil, Shubham
    Lashkare, Sandip
    Deshpande, Veeresh
    Ganguly, Udayan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (11) : 6034 - 6041
  • [33] Electronic structures and optical properties of HfO2-TiO2 alloys studied by first-principles GGA plus U approach
    Li, Jin-Ping
    Meng, Song-He
    Yang, Cheng
    Lu, Han-Tao
    Tohyama, Takami
    CHINESE PHYSICS B, 2018, 27 (02)
  • [34] Crystallization of TiO2 on sputter deposited amorphous titanium thin films
    Tepe, Seda Aysel
    Danisman, Murat
    Cansever, Nurhan
    MATERIALS CHEMISTRY AND PHYSICS, 2022, 282
  • [35] Electronic and luminescence properties of sputter-deposited TiO2 nanostructures
    Chang, Yu-Ming
    Mishra, Dillip K.
    Ting, Jyh-Ming
    ACTA MATERIALIA, 2013, 61 (19) : 7511 - 7519
  • [36] Demonstration of ferroelectricity in PLD grown HfO2-ZrO2 nanolaminates
    Das, Sree Sourav
    Fox, Zach
    Mia, Md Dalim
    Samuels, Brian C.
    Saha, Rony
    Droopad, Ravi
    AIMS MATERIALS SCIENCE, 2023, 10 (02) : 342 - 355
  • [37] Nanomechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 thin films
    Venkatachalam, D. K.
    Bradby, J. E.
    Saleh, M. N.
    Ruffell, S.
    Elliman, R. G.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)
  • [38] HfO2-SiO2 mixed film deposited by Ion Assisted Deposition Coevaporation
    Niu, Xinshang
    Jiao, Hongfei
    Bao, Ganghua
    Zhan, Jinlong
    Cheng, Xinbin
    Wang, Zhanshan
    LASER-INDUCED DAMAGE IN OPTICAL MATERIALS 2017, 2017, 10447
  • [39] A study on structural, optical and hydrophobic properties of oblique angle sputter deposited HfO2 films
    Jain, Ravish K.
    Gautam, Yogendra K.
    Dave, Vikramaditya
    Chawla, Amit K.
    Chandra, Ramesh
    APPLIED SURFACE SCIENCE, 2013, 283 : 332 - 338
  • [40] Pairing of cation vacancies and gap-state creation in TiO2 and HfO2
    Ahn, Hyo-Shin
    Han, Seungwu
    Hwang, Cheol Seong
    APPLIED PHYSICS LETTERS, 2007, 90 (25)
12345