Design of InP-Based High-Speed Photodiode for 2-μm Wavelength Application

被引：10

作者：

Chen, Yaojiang ^{[1
]}

Chen, Baile ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2019年 / 55卷 / 01期

关键词：

Carrier dynamic; high speed photodiodes; type-II quantum well; uni-traveling carrier photodiode; II QUANTUM-WELLS;

D O I：

10.1109/JQE.2018.2888876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we proposed and designed the high speed uni-traveling carrier photodiodes operating beyond 2 mu m. InGaAs/GaAsSb type-II multiple quantum wells (MQWs) were used as the absorption region of uni-traveling carrier photodiode to have optical response beyond 2 mu m. A rate equation model was developed to study the bandwidth characteristics of this photodiode. The carrier dynamics of the carrier sweeping out process was discussed, and the structure parameters of the quantum wells were optimized. Result shows a 3-dB bandwidth over 40 GHz can be achieved with the optimized design. We also studied the feasibility of dual depletion PIN (DD-PIN) photodiode with MQWs absorber. The optimized DD-PIN photodiode could achieve similar bandwidth under relatively high-bias condition.

引用

页数：8

共 25 条

[1] Beling A, 2017, SPRINGER SER OPT SCI, V161, P249, DOI 10.1007/978-3-319-42367-8_6
[2] InP-Based High-Speed Photodetectors
Beling, Andreas
Campbell, Joe C.
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 27 (1-4) : 343 - 355
[3] Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantum wells lasers
Chen, Baile
[J]. OPTICS EXPRESS, 2017, 25 (21): : 25183 - 25192
[4] Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers
Chen, Baile
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (04) : 1606 - 1611
[5] Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells
Chen, Baile
Holmes, Archie L., Jr.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (31)
[6] InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region
Chen, Baile
Holmes, Archie L., Jr.
[J]. OPTICS LETTERS, 2013, 38 (15) : 2750 - 2753
[7] Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes
Chen, Baile
Jiang, W. Y.
Holmes, A. L., Jr.
[J]. OPTICAL AND QUANTUM ELECTRONICS, 2012, 44 (3-5) : 103 - 109
[8] SWIR/MWIR InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells
Chen, Baile
Jiang, Weiyang
Yuan, Jinrong
Holmes, Archie L., Jr.
Onat, Bora. M.
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (09) : 1244 - 1250
[9] Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 μm
Chen, Baile
Jiang, W. Y.
Yuan, Jinrong
Holmes, Archie L., Jr.
Onat, Bora. M.
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (04) : 218 - 220
[10] Corbett B., 2014, P EUR C OPT COMM SEP, V33, P1

← 1 2 3 →