Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor

被引：18

作者：

Wang, SY ^{[1
]}

Cheng, BL ^{[1
]}

Wang, C ^{[1
]}

Dai, SY ^{[1
]}

Lu, HB ^{[1
]}

Zhou, YL ^{[1
]}

Chen, ZH ^{[1
]}

Yang, GZ ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 06期

关键词：

D O I：

10.1007/s00339-004-3001-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mechanisms of leakage current have been investigated in the capacitor consisting of a Ba0.6Sr0.4TiO3 thin film, a Pt top electrode, and a Nb-doped SrTiO3 (STON) bottom electrode. The leakage current shows asymmetric behavior for different bias voltage. For the Pt electrode negatively biased, the leakage current can be explained by modified Schottky emission mechanism, and the barrier height is obtained as 0.44 eV. For the Pt electrode positively biased, the leakage current shows a space-charge-limited current behavior. The trap in dielectric film is regarded as deep traps, and the density of trapped carrier is estimated as about 3.2 x 10(23)/m(3).

引用

页码：1265 / 1268

页数：4

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