Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor

被引：18

作者：

Wang, SY ^{[1
]}

Cheng, BL ^{[1
]}

Wang, C ^{[1
]}

Dai, SY ^{[1
]}

Lu, HB ^{[1
]}

Zhou, YL ^{[1
]}

Chen, ZH ^{[1
]}

Yang, GZ ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 06期

关键词：

D O I：

10.1007/s00339-004-3001-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mechanisms of leakage current have been investigated in the capacitor consisting of a Ba0.6Sr0.4TiO3 thin film, a Pt top electrode, and a Nb-doped SrTiO3 (STON) bottom electrode. The leakage current shows asymmetric behavior for different bias voltage. For the Pt electrode negatively biased, the leakage current can be explained by modified Schottky emission mechanism, and the barrier height is obtained as 0.44 eV. For the Pt electrode positively biased, the leakage current shows a space-charge-limited current behavior. The trap in dielectric film is regarded as deep traps, and the density of trapped carrier is estimated as about 3.2 x 10(23)/m(3).

引用

页码：1265 / 1268

页数：4

共 18 条

[1] Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping [J].

Ahn, KH ;

Baik, S ;

Kim, SS .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2651-2654

[2] ELECTRICAL-PROPERTIES OF FERROELECTRIC THIN-FILM CAPACITORS WITH HYBRID (PT,RUO2) ELECTRODES FOR NONVOLATILE MEMORY APPLICATIONS [J].

ALSHAREEF, HN ;

AUCIELLO, O ;

KINGON, AI .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :2146-2154

[3] Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors directly on silicon [J].

Bandaru, J ;

Sands, T ;

Tsakalakos, L .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) :1121-1125

[4] Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O-3 thin films [J].

Chen, MS ;

Wu, TB ;

Wu, JM .

APPLIED PHYSICS LETTERS, 1996, 68 (10) :1430-1432

[5] Characterization of SrRuO3 thin film grown by laser ablation at temperatures above 400 °C [J].

Fang, XD ;

Kobayashi, T .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :162-166

[6] A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes [J].

Hwang, CS ;

Lee, BT ;

Kang, CS ;

Kim, JW ;

Lee, KH ;

Cho, HJ ;

Horii, H ;

Kim, WD ;

Lee, SI ;

Roh, YB ;

Lee, MY .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3703-3713

[7] SIMPLIFIED THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN AN INSULATOR WITH TRAPS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1956, 103 (06) :1648-1656

[8] Highly c-axis oriented Pb(Zr,Ti)O3 thin films grown on Ir electrode barrier and their electrical properties [J].

Lee, KB ;

Tirumala, S ;

Desu, SB .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1484-1486

[9] Electrical characterization of SrTiO3 thin films grown on Nb-doped SrTiO3 single crystals [J].

Morito, K ;

Suzuki, T ;

Sekiguchi, S ;

Okushi, H ;

Fujimoto, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (01) :166-171

[10] Nonlinear positive temperature coefficient of resistance of BaTiO3 film [J].

Okano, M ;

Watanabe, Y ;

Cheong, SW .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1923-1925

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