Growth of self-aligned single-walled carbon nanotubes by laser-assisted chemical vapor deposition

被引：0

作者：

Mahjouri, A. ^{[1
]}

Zhou, Y. S. ^{[1
]}

Xiong, W. ^{[1
]}

Lu, Y. F. ^{[1
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

来源：

LASER-BASED MICRO- AND NANOPACKAGING AND ASSEMBLY II | 2008年 / 6880卷

关键词：

single-walled carbon nanotubes (SWNTs); laser-assisted chemical vapor deposition (LCVD); self-alignment; single-walled carbon nanotube field-effect transistors (SWNT-FETs);

D O I：

10.1117/12.762171

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controllable growth of self-aligned single-walled carbon nanotubes (SWNTs) was developed using Laser-assisted chemical vapor deposition (LCVD) method. By integrating both electrical-field and gas-flow induced orientation effects in the LCVD process, SWNT growth direction was decided. According to Raman measurements, narrow diameter distribution of the SWNTs was realized by controlling reaction temperature. Individual SWNT bridging opposite Mo electrodes was achieved by creating local electrical field using point-to-point electrodes. Back-gated single-walled carbon nanotube based field-effect transistors (SWNT-FETs) were fabricated using LCVD method, and showed typical p-type behavior.

引用

页数：9

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