A review of diamond synthesis by CVD processes

被引：177
作者：
Schwander, Michael [1 ]
Partes, Knut [1 ]
机构：
[1] BIAS Bremer Inst Angew Strahltech GmbH, D-28359 Bremen, Germany
来源：
DIAMOND AND RELATED MATERIALS | 2011年 / 20卷 / 09期
关键词：
CVD; Hot filament; Plasma CVD; Cathodic arc discharge; Combustion synthesis; CHEMICAL-VAPOR-DEPOSITION; GLOW-DISCHARGE CVD; HOT-FILAMENT CVD; COMBUSTION-FLAME METHOD; MICROWAVE PLASMA; THIN-FILMS; LOW-PRESSURE; WC-CO; DC DISCHARGE; HIGH-QUALITY;
D O I：
10.1016/j.diamond.2011.08.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond has some of the most extreme mechanical, physical and chemical properties of all materials. Within the last 50 years, a wide variety of manufacturing methods have been developed to deposit diamond layers under various conditions. The most common process for diamond growth is the chemical vapor deposition (CVD). Starting from the first publications until the latest results today, a range of different developments can be seen. Comparing the basic conditions and the process parameters of the CVD techniques, the technical limitations are shown. Processes with increased pressure, flow rate and applied power are the general tendency. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1287 / 1301
页数：15
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