Memristor device based on carbon nanotubes decorated with gold nanoislands

被引:22
作者
Radoi, A. [1 ]
Dragoman, M. [1 ]
Dragoman, D. [2 ]
机构
[1] Natl Inst Res & Dev Microtechnol IMT, Bucharest 023573, Romania
[2] Univ Bucharest, Dept Phys, Bucharest 077125, Romania
关键词
D O I
10.1063/1.3633352
中图分类号
O59 [应用物理学];
学科分类号
摘要
Memristors are passive nanoelectronics devices with applications in memories and switches which, although not containing magnetic components, have as distinct signature a hysteresis loop in the current-voltage dependence. Even if the prototype material for memristors is a binary oxide, we demonstrate that such devices can be easily implemented using carbon nanotubes decorated with metallic nanoislands, where the hysteretic action is a result of the thermionic emission of electrons trapped in the gold nanoislands. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3633352]
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页数:3
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