Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy

被引：9
作者：
Bilel, C. [1 ]
Fitouri, H. [1 ]
Zaied, I. [1 ]
Bchetnia, A. [1 ]
Rebey, A. [1 ]
El Jani, B. [1 ]
机构：
[1] Univ Monastir, Fac Sci, Unite Rech Heteroepitaxies & Applicat, Monastir 5019, Tunisia
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 31卷
关键词：
Photoreflectance; GaAs:V; Metalorganic vapor phase epitaxy; INSULATING GALLIUM ARSENIDE; MODULATION SPECTROSCOPY; TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; CRITICAL-POINTS; THIN-FILM; LEVEL; ELECTROREFLECTANCE; GERMANIUM; MBE;
D O I：
10.1016/j.mssp.2014.11.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2 x 10(13) to 2 x 10(17) cm(-3). We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Gamma(0) increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：100 / 105
页数：6
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