Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy

被引：9

作者：

Bilel, C. ^{[1
]}

Fitouri, H. ^{[1
]}

Zaied, I. ^{[1
]}

Bchetnia, A. ^{[1
]}

Rebey, A. ^{[1
]}

El Jani, B. ^{[1
]}

机构：

[1] Univ Monastir, Fac Sci, Unite Rech Heteroepitaxies & Applicat, Monastir 5019, Tunisia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 31卷

关键词：

Photoreflectance; GaAs:V; Metalorganic vapor phase epitaxy; INSULATING GALLIUM ARSENIDE; MODULATION SPECTROSCOPY; TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; CRITICAL-POINTS; THIN-FILM; LEVEL; ELECTROREFLECTANCE; GERMANIUM; MBE;

D O I：

10.1016/j.mssp.2014.11.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We characterized the vanadium-doped (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. The conductivity of the samples is checked by the Hall effect measurements, and it is n type with electrons concentration ranging from 2 x 10(13) to 2 x 10(17) cm(-3). We used the photoreflectance technique (PR) to study the effect of vanadium doping on the optical properties of GaAs. Our experimental results show that the built-in electric field F and the broadening parameter Gamma(0) increase with V-doping concentration. Furthermore, the temperature dependence of the built-in electric field and the broadening parameter of GaAs:V samples have been investigated by PR. It has been observed that these parameters increase with increasing temperature. The decrease of the built-in electric field with decreasing temperature is due to the photovoltage effect.We characterized the vanadium-doped GaAs (GaAs:V) layers grown on GaAs substrate by metalorganic vapor phase epitaxy. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：100 / 105

页数：6

共 38 条

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