High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

被引：105

作者：

Martens, M. ^{[1
]}

Schlegel, J. ^{[1
]}

Vogt, P. ^{[1
]}

Brunner, F. ^{[2
]}

Lossy, R. ^{[2
]}

Wuerfl, J. ^{[2
]}

Weyers, M. ^{[2
]}

Kneissl, M. ^{[1
,2
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Leibniz Inst Hochstfrequenztechn, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 21期

关键词：

TRANSISTOR; GAN;

D O I：

10.1063/1.3595303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the optoelectronic properties of Al(0.25)Ga(0.75)N/GaN-based ultraviolet (UV) photodetectors for the application as a high current, high gain optical switch. Due to an internal gain mechanism combined with the high conductivity of the two-dimensional electron gas at the heterostructure interface, photocurrents in the milliampere-range were obtained with UV illumination. By employing a mesa structure design with meander geometry very low dark currents below 50 nA up to a bias voltage of 100 V were achieved. Optical switching with an on/off-current-ratio of five orders of magnitude was demonstrated. The response time was determined to be 6 ms and persistent photoconductivity was observed. The photodetector is visible-blind with a cut-off wavelength of 365 nm according to the band gap energy of the GaN absorption layer. A high responsivity with a maximum of 70 A/mW at 312 nm and 100 V bias voltage was demonstrated. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595303]

引用

页数：3

共 8 条

[1] Contribution of hole trap to persistent photoconductivity in n-type GaN [J].

Cai, S ;

Parish, G ;

Dell, JM ;

Nener, BD .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (02) :1019-1023

[2] Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure [J].

Jiang, H ;

Egawa, T ;

Ishikawa, H ;

Shao, C ;

Jimbo, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (5B) :L683-L685

[3] GATED PHOTODETECTOR BASED ON GAN/ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR [J].

KHAN, MA ;

SHUR, MS ;

CHEN, Q ;

KUZNIA, JN ;

SUN, CJ .

ELECTRONICS LETTERS, 1995, 31 (05) :398-400

[4] High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors [J].

Kuan, TM ;

Chang, SJ ;

Su, YK ;

Chih-Hsin, K ;

Webb, JB ;

Bardwell, JA ;

Liu, Y ;

Tang, HP ;

Lin, WJ ;

Cherng, YT ;

Lan, WH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A) :5563-5564

[5] (Al,ln,Ga)N-based photodetectors.: Some materials issues [J].

Munoz, Elias .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (08) :2859-2877

[6] High responsivity GaN-based UV detectors [J].

Poti, B ;

Todaro, MT ;

Frassanito, MC ;

Pomarico, A ;

Passaseo, A ;

Lomascolo, M ;

Cingolani, R ;

De Vittorio, M .

ELECTRONICS LETTERS, 2003, 39 (24) :1747-1749

[7]

Sze S.M., 2013, SEMICONDUCTOR DEVICE

[8] Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain [J].

Zhang, SK ;

Wang, WB ;

Shtau, I ;

Yun, F ;

He, L ;

Morkoç, H ;

Zhou, X ;

Tamargo, M ;

Alfano, RR .

APPLIED PHYSICS LETTERS, 2002, 81 (25) :4862-4864

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