Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

被引：21

作者：

Coss, Brian E. ^{[1
]}

Smith, Casey ^{[2
]}

Loh, Wei-Yip ^{[2
]}

Majhi, Prashant ^{[2
]}

Wallace, Robert M. ^{[1
]}

Kim, Jiyoung ^{[1
]}

Jammy, Raj ^{[2
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] SEMATECH, Austin, TX 78741 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期

关键词：

Contact resistance; FinFETS; semiconductor-insulator interfaces; semiconductor-metal interfaces;

D O I：

10.1109/LED.2011.2148091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent experiments have demonstrated the ability to alleviate Fermi-level pinning, resulting in reduced Schottky barrier heights (SBHs) and reduced contact resistivity by inserting thin layers of dielectric at the contact interface. In this letter, FinFETs with dielectric SBH tuning layers are investigated and shown to have reduced contact resistance over the control wafer. The reduced contact resistivity results in an approximate to 25% increase in drive current as well as a reduction of R-S/D by 100 Omega . mu m. Contact chain measurement shows a 10-Omega . mu m(2) reduction in specific contact resistivity over the control wafer associated with a 100-meV reduction in SBH. Routes to further improvements in device performance are discussed, including key material considerations for dielectric tuning layers.

引用

页码：862 / 864

页数：3

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