A 2.45-GHz+20-dBm Fast Switching Class-E Power Amplifier With 43% PAE and a 18-dB-Wide Power Range in 0.18-μm CMOS

被引:21
作者
Li, Zhisheng [1 ]
Torfs, Guy [1 ]
Bauwelinck, Johan [1 ]
Yin, Xin [1 ]
Vandewege, Jan [1 ]
Van Praet, Christophe [1 ]
Spiessens, Peter [2 ]
Tubbax, Huub [2 ]
Stubbe, Frederic [2 ]
机构
[1] Univ Ghent, Dept Informat Technol, INTEC, Interuniv Microelect Ctr, B-9000 Ghent, Belgium
[2] Essensium NV, B-3001 Louvain, Belgium
关键词
Cascode; Class E; complementary metal-oxide-semiconductor (CMOS); efficiency; fast switching; loss; output power; power amplifiers (PAs); power control; EFFICIENCY; DESIGN; LOSSES;
D O I
10.1109/TCSII.2012.2186363
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this brief, the losses in Class-E power amplifiers (PAs) with finite dc-feed inductance are analyzed. This analysis results in practical analytical expressions, which significantly simplify the design and optimization of Class-E PAs. To demonstrate their applicability, the design of a state-of-the-art 2.45-GHz differential cascode Class-E PA in 0.18-mu m CMOS with on-chip dc-feed inductor is presented. By the proposed combination of a dynamic supply voltage and a dynamic cascode bias voltage, high drain efficiency is achieved over a wide power control range, covering from 2.2 up to 20 dBm. At 20 dBm, a power-added efficiency as high as 43.6% was measured. Additionally, fast envelope switching is obtained by adding a single switch to the common-gate nodes of both the Class-E stage and the second driver stage. Measurements show a rise time of merely 2.5 ns and a 73-dB isolation between the ON- and OFF-states. These figures enable ranging applications with submeter accuracy.
引用
收藏
页码:224 / 228
页数:5
相关论文
共 17 条
[1]   Analytical design equations for Class-E power amplifiers [J].
Acar, Mustafa ;
Annema, Anne Johan ;
Nauta, Bram .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2007, 54 (12) :2706-2717
[2]   ANALYSIS AND DESIGN OF A GENERALIZED CLASS-E TUNED POWER-AMPLIFIER [J].
AVRATOGLOU, CP ;
VOULGARIS, NC ;
IOANNIDOU, FI .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1989, 36 (08) :1068-1079
[3]   Analysis and Optimum Design of a Class E RF Power Amplifier [J].
Hasani, Javad Yavand ;
Kamarei, Mahmoud .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2008, 55 (06) :1759-1768
[4]   A 1-V CMOS power amplifier for Bluetooth applications [J].
Ho, KW ;
Luong, HC .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2003, 50 (08) :445-449
[5]   Power losses and efficiency of Class-E power amplifier at any duty ratio [J].
Kessler, DJ ;
Kazimierczuk, MK .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2004, 51 (09) :1675-1689
[6]   Analysis of reliability and power efficiency in cascode class-E PAs [J].
Mazzanti, A ;
Larcher, L ;
Brama, R ;
Svelto, F .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (05) :1222-1229
[7]   IDEALIZED OPERATION OF CLASS-E TUNED POWER-AMPLIFIER [J].
RAAB, FH .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1977, 24 (12) :725-735
[8]   TRANSISTOR POWER LOSSES IN CLASS-E TUNED POWER-AMPLIFIER [J].
RAAB, FH ;
SOKAL, NO .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (06) :912-914
[9]   A 2.45-GHz 0.13-μm CMOS PA with parallel amplification [J].
Reynaert, Patrick ;
Steyaert, Michiel S. J. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (03) :551-562
[10]   Output Power Control in Class-E Power Amplifiers [J].
Sira, Daniel ;
Thomsen, Pia ;
Larsen, Torben .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (04) :232-234