Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth

被引：17

作者：

Alloing, Blandine ^{[1
]}

Zuniga-Perez, Jesus ^{[1
]}

机构：

[1] CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2016年 / 55卷

关键词：

GaN nanowires; MOCVD growth; NITRIDE NANOWIRES; HETEROSTRUCTURES; MORPHOLOGY; NANORODS; DEFECTS; ARRAYS;

D O I：

10.1016/j.mssp.2016.03.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the increasing attention dedicated to GaN nanowires for the realization of advanced optoelectronic devices, important efforts have been devoted to the nanowire growth optimization. This review covers the developments achieved so far in the growth of GaN nanowires by Metal Organic Chemical Vapor Deposition. Different approaches are discussed, including growth with and without catalyst, self-assembled growth as well as selective-area growth; their respective advantages and limits are detailed. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：51 / 58

页数：8

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