Improved Performance of Pentacene Thin-Film Transistors with Al2O3 Gate Dielectric: Annealing Effect on the Surface Properties

被引：10

作者：

Hyung, Gun Woo ^{[1
]}

Park, Jaehoon ^{[2
,3
]}

Koo, Ja-Ryong ^{[4
]}

Li, Zhao-Hui ^{[5
]}

Kwon, Sang Jik ^{[5
]}

Cho, Eou-Sik ^{[5
]}

Kim, Young Kwan ^{[4
]}

机构：

[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea

[2] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England

[3] Univ Durham, Ctr Mol & Nanoscale Elect, Durham DH1 3LE, England

[4] Hongik Univ, Dept Informat Display, Seoul 121791, South Korea

[5] Gachon Univ, Dept Elect Engn, Songnam 461701, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

DEPOSITION; MORPHOLOGY; ROUGHNESS; LAYER;

D O I：

10.1143/JJAP.51.025702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated pentacene thin-film transistors (TFTs) with modified Al2O3 layers as gate dielectrics. The effects of thermal treatments on the E-beam-processed Al2O3 layers in the TFTs were investigated by using various analytical tools such as X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscope (AFM), and a contact angle method. From the results of the analyses, it was confirmed that the performance of thermally treated Al2O3 gate dielectrics is much better than that of non-treated ones. Finally, pentacene TFTs were fabricated with optimum conditions and improved electrical properties were obtained for low-voltage (below -3 V) TFTs as follows: a mobility of 0.9 cm(2) V-1 s(-1), a threshold voltage of -1.3 V, a sub-threshold slope of 0.12 V/decade, and an on/off current ratio of 2.2 x 10(5). (c) 2012 The Japan Society of Applied Physics

引用

页数：5

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