Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

被引：105

作者：

Matsuo, Shinji ^{[1
]}

Takeda, Koji ^{[1
]}

Sato, Tomonari ^{[1
]}

Notomi, Masaya ^{[2
]}

Shinya, Akihiko ^{[2
]}

Nozaki, Kengo ^{[2
]}

Taniyama, Hideaki ^{[2
]}

Hasebe, Koichi ^{[1
]}

Kakitsuka, Takaaki ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 04期

关键词：

LOW-POWER; ON-CHIP; NANOCAVITY; NETWORKS;

D O I：

10.1364/OE.20.003773

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 mu A and the estimated effective threshold current is 9.4 mu A. The output power in output waveguide is 1.82 mu W for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications. (C) 2012 Optical Society of America

引用

页码：3773 / 3780

页数：8

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