Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

被引：22
作者：
Moschetti, G. [1 ]
Wadefalk, N. [1 ]
Nilsson, P. -A. [1 ]
Abbasi, M. [1 ]
Desplanque, L. [2 ]
Wallart, X. [2 ]
Grahn, J. [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microelect & Nanosci MC2, SE-41296 Gothenburg, Sweden
[2] Univ Lille 1, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 03期
基金：
瑞典研究理事会;
关键词：
Cryogenic; InAs/AlSbHEMT; low-noise amplifier (LNA); low-power;
D O I：
10.1109/LMWC.2011.2182637
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.
引用
收藏
页码：144 / 146
页数：3
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