GaAsBi Photoconductive Terahertz Detector Sensitivity at Long Excitation Wavelengths

被引：33

作者：

Arlauskas, Andrius ^{[1
]}

Svidovsky, Polina ^{[1
]}

Bertulis, Klemensas ^{[1
]}

Adomavicius, Ramunas ^{[1
]}

Krotkus, Arunas ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, LT-01108 Vilnius, Lithuania

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 02期

关键词：

GABIAS; PULSES;

D O I：

10.1143/APEX.5.022601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the terahertz frequency radiation detection using photoconductive antennas fabricated from molecular-beam-epitaxy-grown GaAsBi. We have estimated that the detector has the highest sensitivity when illuminated with 1.1- to 1.3-mu m-wavelength femtosecond pulses. Electron scattering to higher conduction valleys takes place at shorter wavelengths; thus, we have determined the intervalley separation in the conduction band (0.26-0.29 eV). Though the sensitivity of GaAsBi detector at 1.55 mu m decreases by about 40% compared with its maximum value, we have demonstrated a terahertz time domain spectroscopy system based on the femtosecond Er-doped fiber laser using this detector. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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