Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy

被引：25

作者：

Lin, Hai ^{[1
]}

Chen, Robert ^{[2
]}

Huo, Yijie ^{[2
]}

Kamins, Theodore I. ^{[2
]}

Harris, James S. ^{[2
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 11期

关键词：

GeSn alloy; Molecular beam epitaxy; Strain; Structural characterization; Epitaxial growth; ALLOYS;

D O I：

10.1016/j.tsf.2012.01.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality Ge1-xSnx thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and secondary ion mass spectrometry are used to determine the strain and Sn concentration. Up to 10.5% Sn has been incorporated into the Ge1-xSnx thin film without Sn precipitation, as verified by transmission electron microscopy. Roughened surfaces are found for tensile strained Ge1-xSnx layers. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：3927 / 3930

页数：4

共 50 条

[31] Growth temperature dependence of SrTiO3 thin films by molecular beam epitaxy [J].

Bhuiyan, MNK ;

Kimura, H ;

Tambo, T ;

Tatsuyama, C .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1B) :677-680

[32] Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy [J].

Shim, KH ;

Myoung, J ;

Gluschenkov, O ;

Kim, K ;

Kim, C ;

Robinson, IK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L313-L315

[33] Growth of CrTe thin films by molecular-beam epitaxy [J].

Sreenivasan, MG ;

Hou, XJ ;

Teo, KL ;

Jalil, MBA ;

Liew, T ;

Chong, TC .

THIN SOLID FILMS, 2006, 505 (1-2) :133-136

[34] Growth of iron nitride thin films by molecular beam epitaxy [J].

Naito, Michio ;

Uehara, Koji ;

Takeda, Rikimaru ;

Taniyasu, Yoshitaka ;

Yamamoto, Hideki .

JOURNAL OF CRYSTAL GROWTH, 2015, 415 :36-40

[35] Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells [J].

Wan, W. (wjwan@mail.sim.ac.cn), 1600, Editorial Office of High Power Laser and Particle Beams, P.O. Box 919-805, Mianyang, 621900, China (25) :1523-1526

[36] Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy [J].

Zhan, HH ;

Nötzel, R ;

Hamhuis, GJ ;

Eijkemans, TJ ;

Wolter, JH .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :135-139

[37] Growth of MnGeP2 thin films by molecular beam epitaxy [J].

Minami, K ;

Jogo, J ;

Smirnov, V ;

Yuasa, H ;

Nagatsuka, T ;

Ishibashi, T ;

Morishita, Y ;

Matsuo, Y ;

Kangawa, Y ;

Koukitu, A ;

Sato, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11) :L265-L267

[38] Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy [J].

Bratland, K. A. ;

Spila, T. ;

Cahill, D. G. ;

Greene, J. E. ;

Desjardins, P. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)

[39] Low temperature molecular beam epitaxy growth of cubic GaCrN [J].

Kimura, S. ;

Emura, S. ;

Yamauchi, Y. ;

Zhou, Y. K. ;

Hasegawa, S. ;

Asahi, H. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (01) :40-46

[40] Epitaxial growth of Ge1-xSnx thin film with Sn composition of 50% and possibility of Ge-Sn ordered bonding structure formation [J].

Shibayama, Shigehisa ;

Shibata, Kaito ;

Sakashita, Mitsuo ;

Kurosawa, Masashi ;

Nakatsuka, Osamu .

APPLIED PHYSICS EXPRESS, 2024, 17 (11)

← 1 2 3 4 5 →