Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy

被引：24

作者：

Lin, Hai ^{[1
]}

Chen, Robert ^{[2
]}

Huo, Yijie ^{[2
]}

Kamins, Theodore I. ^{[2
]}

Harris, James S. ^{[2
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 11期

关键词：

GeSn alloy; Molecular beam epitaxy; Strain; Structural characterization; Epitaxial growth; ALLOYS;

D O I：

10.1016/j.tsf.2012.01.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality Ge1-xSnx thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and secondary ion mass spectrometry are used to determine the strain and Sn concentration. Up to 10.5% Sn has been incorporated into the Ge1-xSnx thin film without Sn precipitation, as verified by transmission electron microscopy. Roughened surfaces are found for tensile strained Ge1-xSnx layers. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：3927 / 3930

页数：4

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