Low-temperature growth of Ge1-xSnx thin films with strain control by molecular beam epitaxy

被引：25

作者：

Lin, Hai ^{[1
]}

Chen, Robert ^{[2
]}

Huo, Yijie ^{[2
]}

Kamins, Theodore I. ^{[2
]}

Harris, James S. ^{[2
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 11期

关键词：

GeSn alloy; Molecular beam epitaxy; Strain; Structural characterization; Epitaxial growth; ALLOYS;

D O I：

10.1016/j.tsf.2012.01.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality Ge1-xSnx thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and secondary ion mass spectrometry are used to determine the strain and Sn concentration. Up to 10.5% Sn has been incorporated into the Ge1-xSnx thin film without Sn precipitation, as verified by transmission electron microscopy. Roughened surfaces are found for tensile strained Ge1-xSnx layers. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：3927 / 3930

页数：4

共 13 条

[1] Nonlinear structure-composition relationships in the Ge1-ySny/Si(100) (y < 0.15) system [J].

Beeler, R. ;

Roucka, R. ;

Chizmeshya, A. V. G. ;

Kouvetakis, J. ;

Menendez, J. .

PHYSICAL REVIEW B, 2011, 84 (03)

[2] Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1-xSnx (x≲0.26) alloys on Ge(001)2x1 [J].

Gurdal, O ;

Desjardins, P ;

Carlsson, JRA ;

Taylor, N ;

Radamson, HH ;

Sundgren, JE ;

Greene, JE .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) :162-170

[3] Interband transitions in SnxGe1-x alloys [J].

He, G ;

Atwater, HA .

PHYSICAL REVIEW LETTERS, 1997, 79 (10) :1937-1940

[4] Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy [J].

Huo, Yijie ;

Lin, Hai ;

Chen, Robert ;

Makarova, Maria ;

Rong, Yiwen ;

Li, Mingyang ;

Kamins, Theodore I. ;

Vuckovic, Jelena ;

Harris, James S. .

APPLIED PHYSICS LETTERS, 2011, 98 (01)

[5] X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy [J].

Lin, Hai ;

Huo, Yijie ;

Rong, Yiwen ;

Chen, Robert ;

Kamins, Theodore I. ;

Harris, James S. .

JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) :17-20

[6] Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon [J].

Mathews, J. ;

Beeler, R. T. ;

Tolle, J. ;

Xu, C. ;

Roucka, R. ;

Kouvetakis, J. ;

Menendez, J. .

APPLIED PHYSICS LETTERS, 2010, 97 (22)

[7] Band structure calculations of Si-Ge-Sn alloys: achieving direct band gap materials [J].

Moontragoon, Pairot ;

Ikonic, Zoran ;

Harrison, Paul .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (07) :742-748

[8] Direct gap electroluminescence from Si/Ge1-ySny p-i-n heterostructure diodes [J].

Roucka, R. ;

Mathews, J. ;

Beeler, R. T. ;

Tolle, J. ;

Kouvetakis, J. ;

Menendez, J. .

APPLIED PHYSICS LETTERS, 2011, 98 (06)

[9] Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers [J].

Shimura, Yosuke ;

Tsutsui, Norimasa ;

Nakatsuka, Osamu ;

Sakai, Akira ;

Zaima, Shigeaki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)

[10]

Su SJ, 2011, OPT EXPRESS, V19, P6408, DOI [10.1364/OE.19.006408, 10.1364/OE.19.006400]

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