Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

被引：1

作者：

Li Hai-Xia ^{[1
]}

Li Zhan-Kui ^{[1
]}

Wang Fang-Cong ^{[2
]}

Wang Zhu-Sheng ^{[1
]}

Wang Xiu-Hua ^{[1
]}

Li Chun-Yan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

[2] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

来源：

CHINESE PHYSICS C | 2011年 / 35卷 / 07期

关键词：

nuclear radiation detector; two-step annealing; reverse body resistance; ION-IMPLANTATION; DAMAGE;

D O I：

10.1088/1674-1137/35/7/007

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.

引用

页码：635 / 637

页数：3

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