The effect of ITO surface energy on OLED electrical properties

被引：2

作者：

Petrosino, Mario ^{[1
]}

Vacca, Paolo ^{[2
]}

Licciardo, Gian Domenico ^{[1
]}

Rubino, Alfredo ^{[1
]}

Bellone, Salvatore ^{[1
]}

机构：

[1] Univ Salerno, Dept Elect & Informat Engn, Via Ponte don Melillo, I-84084 Fisciano, SA, Italy

[2] ENEA Portci Res Ctr, Portici, Italy

来源：

PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年

关键词：

indium tin oxide; surface energy; organic light emitting diodes; thermionic injection;

D O I：

10.1109/IWPSD.2007.4472590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two simple empirical models are proposed in order to relate the ITO surface chemical physical properties to the OLED electrical behaviour. Two different organic active layers have been deposited over the ITO substrate: evaporated small organic molecule or spun polymer. In the first case it has emerged that the device current depends on the ITO surface energy through an exponential law, while in the second it is the anode potential barrier that is influenced by the surface energy decreasing. These models allow to tune the device electrical characteristics changing the materials technological features.

引用

页码：606 / +

页数：2

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