Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

被引：2

作者：

Song, Chang-Hun ^{[1
,2
]}

Kong, Minwoo ^{[2
,3
]}

Jang, Hyunchul ^{[2
]}

Lee, Sang Tae ^{[2
]}

Park, Hyeong-Ho ^{[2
]}

Kim, Donghyun ^{[2
]}

Song, Keunman ^{[2
]}

Ko, Dae-Hong ^{[1
]}

Shin, Chan-Soo ^{[2
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea

[2] Korea Adv Nanoctr KANC, Suwon 16229, South Korea

[3] Seoul Natl Univ SNU, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea

来源：

CRYSTALS | 2022年 / 12卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

MOCVD; InAs; nanowire; vapor-solid method; reverse tapering; ELECTRICAL-PROPERTIES;

D O I：

10.3390/cryst12121846

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the direction was extremely suppressed, their lateral growth was enhanced when the diethyl-tellurium (DETe) flow rate was increased as they grew. Moreover, the sidewall planes evolved from (11 over bar 0) (90 & DEG; against the (111) plane) to a reverse-tapered morphology, which had a 62 & DEG; slope against the InP (111)B plane, when the Te flow rate and growth time were increased. This indicates that the surfactant effect of adsorbed Te atoms on InAs changes the relative growth rate between (111) and (11 over bar 0) due to the increase in surface free energy in the growth plane.

引用

页数：10

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