Simulation Study on the Feasibility of Si as Material for Ultra-Scaled Nanowire Field-Effect Transistors

被引：0

作者：

Stanojevic, Z. ^{[1
]}

Baumgartner, O. ^{[1
]}

Karner, M. ^{[1
]}

Mitterbauer, F. ^{[1
]}

Demel, H. ^{[1
]}

Kernstock, C. ^{[1
]}

机构：

[1] Global TCAD Solut GmbH, Landhausgasse 4-1a, A-1010 Vienna, Austria

来源：

2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) | 2016年

关键词：

MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a simulation framework which allows thorough performance evaluation of ultra-scaled devices. Our simulation approach is based on the full solution of the Boltzmann transport equation (BTE) on subbands as calculated from a k.p-Hamiltonian and including all relevant scattering mechanisms which occur in semiconductors at room temperature. We employ the simulation framework to investigate the performance limits of silicon-based technology for ultra-scaled field-effect transistors in logic applications.

引用

页码：147 / 150

页数：4

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