Debye-Einstein approximation approach to calculate the lattice specific heat and related parameters for a Si nanowire

被引：5

作者：

Alassafee, A. Kh. ^{[1
]}

Omar, M. S. ^{[1
]}

机构：

[1] Univ Salahaddin, Coll Sci, Dept Phys, Arbil, Kurdistan, Iraq

来源：

JOURNAL OF TAIBAH UNIVERSITY FOR SCIENCE | 2017年 / 11卷 / 06期

关键词：

Lattice specific heat capacity; Gruneisen parameter; Debye-Einstein model; Si nanowires; THERMAL-EXPANSION; THIN-FILMS; SILICON; MICROCALORIMETER; NANOCRYSTALS; LENGTH;

D O I：

10.1016/j.jtrusci.2016.11.002

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The modified Debye Einstein approximation model is used to calculate nanoscale size-dependent values of Gruneisen parameters and lattice specific heat capacity for Si nanowires. All parameters forming the model, including Debye temperatures, bulk moduli, the lattice thermal expansion and the lattice volume, are calculated according to their nanoscale size dependence. Values for lattice volume Gruneisen parameters increase with the decrease of the nanowires' diameter, while all other parameters decrease. The nanosize dependence of lattice thermal parameters agree with other reported theoretical results. (C) 2017 The Authors. Production and hosting by Elsevier B.V. on behalf of Taibah University. This is an open access article under the CC BY-NC-ND license

引用

页码：1226 / 1231

页数：6

共 28 条

[1] Picosecond ultrasonic measurements of attenuation of longitudinal acoustic phonons in silicon [J].

Daly, B. C. ;

Kang, K. ;

Wang, Y. ;

Cahill, David G. .

PHYSICAL REVIEW B, 2009, 80 (17)

[2] The melting of silicon nanocrystals: Submicron thin-film structures derived from nanocrystal precursors [J].

Goldstein, AN .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 62 (01) :33-37

[3] How does the nickel nanowire melt? [J].

Hui, L ;

Pederiva, F ;

Wang, BL ;

Wang, JL ;

Wang, GH .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :011913-1

[4] First-Principles Calculations of the Specific Heats of Cubic Carbides and Nitrides [J].

Iikubo, Satoshi ;

Ohtani, Hiroshi ;

Hasebe, Mitsuhiro .

MATERIALS TRANSACTIONS, 2010, 51 (03) :574-577

[5] Phonon anharmonicity in silicon from 100 to 1500 K [J].

Kim, D. S. ;

Smith, H. L. ;

Niedziela, J. L. ;

Li, C. W. ;

Abernathy, D. L. ;

Fultz, B. .

PHYSICAL REVIEW B, 2015, 91 (01)

[6] Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width [J].

Kizuka, T ;

Takatani, Y ;

Asaka, K ;

Yoshizaki, R .

PHYSICAL REVIEW B, 2005, 72 (03)

[7] Relationship between the thermal expansion coefficient, plasmon energy, and bond length of ternary chalcopyrite semiconductors [J].

Kumar, V ;

Sastry, BSR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2002, 63 (01) :107-112

[8] ANALYTIC RELATION BETWEEN BULK MODULI AND LATTICE-CONSTANTS [J].

LAM, PK ;

COHEN, ML ;

MARTINEZ, G .

PHYSICAL REVIEW B, 1987, 35 (17) :9190-9194

[9] First-principles study of the Young's modulus of Si ⟨001⟩ nanowires [J].

Lee, Byeongchan ;

Rudd, Robert E. .

PHYSICAL REVIEW B, 2007, 75 (04)

[10] Ultrathin single-crystalline-silicon cantilever resonators: Fabrication technology and significant specimen size effect on Young's modulus [J].

Li, XX ;

Ono, T ;

Wang, YL ;

Esashi, M .

APPLIED PHYSICS LETTERS, 2003, 83 (15) :3081-3083

← 1 2 3 →