Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

被引：9

作者：

Schwank, James R. ^{[1
]}

Shaneyfelt, Marty R. ^{[1
]}

Dodd, Paul E. ^{[1
]}

McMorrow, Dale ^{[2
]}

Vizkelethy, Gyorgy ^{[1
]}

Ferlet-Cavrois, Veronique ^{[3
]}

Gouker, Pascale M. ^{[4
]}

Flores, Richard S. ^{[1
]}

Stevens, Jeffrey ^{[1
]}

Buchner, Stephen B. ^{[2
]}

Dalton, Scott M. ^{[1
]}

Swanson, Scot E. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] ESA ESTEC, NL-2200 AG Noordwijk, Netherlands

[4] Massachusetts Inst Technol MIT Lincoln Lab, Lexington, MA 02420 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 03期

关键词：

Hardness assurance; heavy-ion testing; laser testing; single-event upset (SEU); threshold LET; two-photon absorption (TPA); PULSED-LASER; HEAVY-ION; CO-60;

D O I：

10.1109/TNS.2011.2128345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The amounts of charge collection by single-photon absorption (SPA) and by two-photon absorption (TPA) laser testing techniques have been directly compared using specially made SOI diodes. For SPA measurements and some TPA measurements, the back substrates of the diodes were removed by etching with XeF2. With the back substrates removed, the amount of TPA induced charge collection can be correlated to the amount of SPA induced charge collection. There are significant differences, however, in the amount of TPA induced charge collection for diodes with and without substrates. For the SOI diodes of this study, this difference appears to arise from several contributions, including nonlinear-optical losses and distortions that occur as the pulse propagates through the substrate, as well as displacement currents that occur only when the back substrate is present. These results illustrate the complexity of interpreting TPA and SPA single-event upset measurements.

引用

页码：820 / 826

页数：7

共 18 条

[1] Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains [J].