High temperature annealed Ge/Ag/Ni ohmic contact for InAlAs/InGaAs HEMTs

被引：1
|
作者：
Zhao, W
Adesida, I
机构：
[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 11期
关键词：
D O I：
10.1049/el:20051106
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ge/Ag/Ni metallisation with an overlay of Ti/Pt/Au was investigated as ohmic contact on an InAlAs/InGaAs/InP high electron mobility transistor (HEMT) structure. Its electrical characteristics were measured after annealing and compared with those of AuGe/Ni/Au and AuGe/Ni ohmic contacts. It was found to have ohmic contact resistance as low as those for AuGe/Ni/Au and AuGe/Ni metallisations but with much higher annealing temperatures and larger processing latitude.
引用
收藏
页码：664 / 665
页数：2
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