Annealing process of defects in epitaxial SiC induced by He and electron irradiation: Positron annihilation study

被引：3

作者：

Kawasuso, A

Redmann, F

Krause-Rehberg, R

Sperr, P

Frank, T

Weidner, M

Pensl, G

Itoh, H

机构：

[1] Univ Halle Wittenberg, DE-06108 Halle, Germany

[2] Univ Bundeswehr Munchen, DE-85577 Neubiberg, Germany

[3] Univ Erlangen Nurnberg, DE-91058 Erlangen, Germany

[4] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

annealing; defect; Doppler broadening; epitaxial layers; positron annihilation; vacancy;

D O I：

10.4028/www.scientific.net/MSF.353-356.537

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Annealing processes of vacancy-type defects in epitaxial 6H SiC after 2 MeV electron irradiation and multiple He implantation have been investigated using positron annihilation spectroscopy. Vacancy-type defects are found to disappear in two annealing stages: at 500-800 degreesC and 1200-1500 degreesC. Silicon vacancies are the major positron trapping centers after electron irradiation. Two annealing stages after electron irradiation are attributed to the disappearance of isolated silicon vacancies and complexes associated with silicon vacancies, respectively. In He-irradiated SiC, divacancies are also generated in addition to silicon vacancies.

引用

页码：537 / 540

页数：4