The mechanism of field emission for diamond films studied by scanning tunneling microscopy

被引：7

作者：

Chen, SY

Lee, MY

Chen, CS

Lue, JT ^{[1
]}

机构：

[1] Natl Tsinghua Univ, Dept Phys, Hsinchu 30042, Taiwan

[2] Natl Tsinghua Univ, Dept Elect Engn, Hsinchu 30042, Taiwan

来源：

PHYSICS LETTERS A | 2003年 / 313卷 / 5-6期

关键词：

diamond film; local field emission; STM;

D O I：

10.1016/S0375-9601(03)00792-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Diamond films inherited with low electron affinity are prominent material for filed emission display devices. A close inspection of field emission efficiency at each local point by a scanning tunneling microscope (STM) for diamond films fabricated by chemical vapor deposition (CVD) method is fulfilled. We find that the emission character is better at the grain boundaries than on the center of the crystal. The temperature dependence on emission currents can be successfully portrayed by the semiconductor thermionic emission theory. The work function is almost temperature independent whereas the surface band bending increases as temperature decreases. (C) 2003 Elsevier B.V. All rights reserved.

引用

收藏

页码：436 / 441

页数：6

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