Rational Design on Wrinkle-Less Transfer of Transition Metal Dichalcogenide Monolayer by Adjustable Wettability-Assisted Transfer Method

被引:23
作者
Shen, Ying-Chun [1 ,2 ,3 ]
Wu, Yu-Ting [4 ,5 ]
Lee, Ling [1 ,2 ,3 ]
Chen, Jyun-Hong [6 ]
Wani, Sumayah Shakil [1 ,2 ,3 ]
Yang, Tzu-Yi [1 ,2 ,3 ]
Luo, Chih Wei [7 ]
Siao, Ming-Deng [4 ,5 ]
Yu, Yi-Jen [8 ]
Chiu, Po-Wen [4 ,5 ]
Chueh, Yu-Lun [1 ,2 ,3 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[2] Natl Tsing Hua Univ, Ctr Fundamental & Appl Sci Matters, Hsinchu 30013, Taiwan
[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[4] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
[5] Natl Tsing Hua Univ, Frontier Res Ctr Fundamental & Appl Sci Matters, Hsinchu 30013, Taiwan
[6] Taiwan Semicond Res Inst, Natl Appl Res Labs, Hsinchu, Taiwan
[7] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[8] Natl Tsing Hua Univ, Instrument Ctr, Hsinchu 30013, Taiwan
关键词
transition metal dichalcogenides materials; wet transfer; wettability; wrinkleless transfer; CHEMICAL-VAPOR-DEPOSITION; WAFER-SCALE GRAPHENE; MOS2; EXFOLIATION; MOBILITY;
D O I
10.1002/adfm.202104978
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transfer-induced wrinkles are universal issues when transferring transition metal dichalcogenide (TMDC) monolayer from an as-grown substrate to a target substrate. The undesired transfer-induced wrinkles can mainly be attributed to wettability, which refers to the ability of a liquid to come in contact with a solid surface. Herein, an adjustable wettability-assisted transfer (AWAT) method with different mixtures of transfer media to reduce the density of wrinkles is developed. By manipulating the wettability of the transfer medium with different ratios of alcohol and de-ionized (DI) water, the TMDC monolayer is smoothly attached to the target substrate, thus achieving a wrinkle-less transferred TMDC monolayer. With this method, the density of wrinkles can be decreased by approximate to 15-20% compared with the conventional transfer method by pure DI water. The transferred MoS2 monolayer with the AWAT method can achieve enhanced carrier mobility from approximate to 20 to approximate to 35 cm(2) V-1 s(-1) in average, which is 30 times larger than that transferred by pure DI water. The AWAT method applied to a WS2 monolayer onto a SiO2/p(+)-Si substrate and a MoS2 monolayer onto a HfO2/p(+)-Si substrate are demonstrated, which is beneficial in research and applications involving the transfer of TMDC monolayer.
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页数:12
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