Critical CuI buffer layer surface density for organic molecular crystal orientation change

被引:4
作者
Ahn, Kwangseok [1 ]
Kim, Jong Beom [1 ]
Kim, Hyo Jung [2 ]
Lee, Hyun Hwi [3 ]
Lee, Dong Ryeol [1 ]
机构
[1] Soongsil Univ, Dept Phys, Seoul 156743, South Korea
[2] Pusan Natl Univ, Dept Organ Mat Sci & Engn, Pusan 609735, South Korea
[3] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea
基金
新加坡国家研究基金会;
关键词
EPITAXIAL-GROWTH; THIN-FILMS; X-RAY; GRAPHENE;
D O I
10.1063/1.4906216
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 -2) by a CuI buffer layer with a very low surface density, so low that a large proportion of the substrate surface is bare. (C) 2015 AIP Publishing LLC.
引用
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页数:5
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