Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes

被引：12

作者：

Usman, Muhammad ^{[1
]}

Nawaz, Nabila ^{[2
]}

Saba, Kiran ^{[1
]}

Karimov, Khasan ^{[2
]}

Muhammad, Nazeer ^{[3
]}

机构：

[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Pakistan

[2] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Elect Engn, Topi 23460, Pakistan

[3] COMSATS Inst Informat Technol, Dept Math, Wah Cantt 47040, Pakistan

来源：

OPTIK | 2018年 / 172卷

关键词：

Light-emitting diode; Built-in polarization; Electroreflectance spectroscopy; Device modeling; MULTIPLE-QUANTUM WELLS; PIEZOELECTRIC FIELD; ELECTRIC-FIELD; POLARIZATION-FIELDS; SPECTROSCOPY; BLUE; LOCALIZATION; DEPENDENCE;

D O I：

10.1016/j.ijleo.2018.07.081

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A second-order polynomial fit function of the experimental built-in electromechanical field in GaN-based light-emitting diodes is presented. The samples range from indium compositions of 10%-30%. The experimental built-in fields of the samples have been measured using electroreflectance spectroscopy. The comparison of the experiment and theory has also been presented. Numerical analysis of the effect of the indium-content on the band diagram, built-in field and internal quantum efficiency is also discussed.

引用

页码：1193 / 1198

页数：6

共 50 条

[21] Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates [J].

Liu, Yi-Jung ;

Chen, Huey-Ing ;

Cheng, Shiou-Ying ;

Lin, Kun-Wei ;

Liu, Wen-Chau .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05) :1664-1668

[22] GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets [J].

Scholz, Ferdinand ;

Wunderer, Thomas ;

Neubert, Barbara ;

Feneberg, Martin ;

Thonke, Klaus .

MRS BULLETIN, 2009, 34 (05) :328-333

[23] Electrical Characteristics of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates [J].

Y. Li ;

L. F. Feng ;

Q. Y. Xing ;

X. L. Wang .

Journal of Electronic Materials, 2015, 44 :999-1002

[24] GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer [J].

Chang, Shoou-Jinn ;

Lu, Lucent ;

Lin, Yu-Yao ;

Li, Shuguang .

JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (11) :910-914

[25] Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes [J].

Cao, X. A. ;

Lu, H. ;

Kaminsky, E. B. ;

Arthur, S. D. ;

Grandusky, J. R. ;

Shahedipour-Sandvik, F. .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) :382-386

[26] GaN-Based Light-Emitting Diodes Prepared With Shifted Laser Stealth Dicing [J].

Chang, Shoou-Jinn Chang ;

Chang, L. M. ;

Chen, J. Y. ;

Hsu, C. S. ;

Kuo, D. S. ;

Shen, C. F. ;

Chen, Wei-Shou ;

Ko, T. K. .

JOURNAL OF DISPLAY TECHNOLOGY, 2016, 12 (02) :195-199

[27] Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes [J].

Tawfik, Wael Z. ;

Hyeon, Gil Yong ;

Lee, June Key .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (16)

[28] Modelling of proton irradiated GaN-based high-power white light-emitting diodes [J].

Floriduz, Alessandro ;

Devine, James D. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)

[29] The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays [J].

Wan Tu-Tu ;

Ye Zhan-Qi ;

Tao Tao ;

Xie Zi-Li ;

Zhang Rong ;

Liu Bin ;

Xiu Xiang-Qian ;

Li Yi ;

Han Ping ;

Shi Yi ;

Zheng You-Dou .

CHINESE PHYSICS B, 2013, 22 (08)

[30] Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer [J].

Li, S. ;

Kuo, D. S. ;

Liu, C. H. ;

Hung, S. C. ;

Chang, S. J. .

IET OPTOELECTRONICS, 2012, 6 (06) :303-306

← 1 2 3 4 5 →