Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes

被引：12
|
作者：
Usman, Muhammad [1 ]
Nawaz, Nabila [2 ]
Saba, Kiran [1 ]
Karimov, Khasan [2 ]
Muhammad, Nazeer [3 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Pakistan
[2] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Elect Engn, Topi 23460, Pakistan
[3] COMSATS Inst Informat Technol, Dept Math, Wah Cantt 47040, Pakistan
来源：
OPTIK | 2018年 / 172卷
关键词：
Light-emitting diode; Built-in polarization; Electroreflectance spectroscopy; Device modeling; MULTIPLE-QUANTUM WELLS; PIEZOELECTRIC FIELD; ELECTRIC-FIELD; POLARIZATION-FIELDS; SPECTROSCOPY; BLUE; LOCALIZATION; DEPENDENCE;
D O I：
10.1016/j.ijleo.2018.07.081
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A second-order polynomial fit function of the experimental built-in electromechanical field in GaN-based light-emitting diodes is presented. The samples range from indium compositions of 10%-30%. The experimental built-in fields of the samples have been measured using electroreflectance spectroscopy. The comparison of the experiment and theory has also been presented. Numerical analysis of the effect of the indium-content on the band diagram, built-in field and internal quantum efficiency is also discussed.
引用
收藏
页码：1193 / 1198
页数：6
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