Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric

被引:0
作者
Cheng, Yunfei [1 ]
Wang, Wu [1 ]
机构
[1] Minist Publ Secur, Res Inst 3, Shanghai 200031, Peoples R China
来源
AOPC 2017: OPTOELECTRONICS AND MICRO/NANO-OPTICS | 2017年 / 10460卷
关键词
organic field-effect transistor; photoresponse; photo-induced memory;
D O I
10.1117/12.2283021
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.
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页数:8
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