Progress in MOS-controlled bipolar devices and edge termination technologies

An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices is presented. The Insulated Gate Bipolar Transistor (IGBT) technology is explored from its initial stage up to the latest state-of-the-art developments, in terms of cathode engineering, drift design and anode engineering to highlight the different approaches used for optimisation and the achieved trade-offs. Further, several MOS-gated thyristors, which are aimed to replace the IGBT, are analysed. Moreover, the present paper reviews the various approaches in the fabrication of edge termination used in power device MOS-controlled bipolar devices. (C) 2003 Elsevier Ltd. All rights reserved.