Post-annealing treatment of a-GeSe thin films for photovoltaic application

被引：30

作者：

Zi, Wei ^{[1
]}

Mu, Fangling ^{[1
]}

Lu, Xiaoman ^{[1
]}

Cao, Yang ^{[1
]}

Xie, Yanping ^{[2
]}

Fang, Liang ^{[1
]}

Cheng, Nian ^{[1
]}

Zhao, Zhiqiang ^{[1
]}

Xiao, Zhenyu ^{[1
]}

机构：

[1] Xinyang Normal Univ, Energy Saving Bldg Mat Innovat Collaborat Ctr Hen, Xinyang 464000, Henan, Peoples R China

[2] Xinyang Normal Univ, Anal & Testing Ctr, Xinyang 464000, Henan, Peoples R China

来源：

SOLAR ENERGY | 2020年 / 199卷

关键词：

GeSe; Thin-film solar cells; Post-annealing treatment; Vacuum evaporation; SOLAR-CELLS; P-LAYER; EFFICIENCY; NANOSHEETS;

D O I：

10.1016/j.solener.2020.02.086

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

p-GeSe is a promising absorber material for thin-film solar cell. In this letter, p-GeSe thin films were fabricated by post-annealing treatment of a-GeSe films. We systematically studied the effects of annealing time on the crystallinity, surface morphology and photoelectric properties of GeSe films, and we found the bandgaps, optical constant and conductivity of GeSe films have shown significant variations when GeSe films transformed from amorphous to polycrystalline. The bandgap of GeSe film can be tuned in a range of 1.17-1.42 eV and the hole mobility can reach as high as 15.02 cm(2) V(-1)s(-1). Finally, a thin-film solar cell based on FTO/CdS/p-GeSe/Au configuration was fabricated and has realized an efficiency of 0.65% and a short circuit current of 12.61 mA/cm(2).

引用

页码：837 / 843

页数：7

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