High performance n-type organic field-effect transistors based on π-electronic systems with trifluoromethylphenyl groups

被引：271

作者：

Ando, S

Nishida, JI

Tada, H

Inoue, Y

Tokito, S

Yamashita, Y ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Engn Sci, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[3] NHK Japan Broadcasting Corp, Sci & Tech Res Labs, Setagaya Ku, Tokyo 1578510, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2005年 / 127卷 / 15期

关键词：

D O I：

10.1021/ja042219+

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel π-electron systems with trifluoromethylphenyl groups and/or a thiazolothiazole unit were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. The trifluoromethylphenyl group was found to be very effective in inducing n-type behavior. The thiazolothiazole unit was favorable for forming stacking structures leading to efficient intermolecular π-π interactions. Copyright © 2005 American Chemical Society.

引用

页码：5336 / 5337

页数：2

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