Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

被引：71
|
作者：
O'Neill, JP [1 ]
Ross, IM [1 ]
Cullis, AG [1 ]
Wang, T [1 ]
Parbrook, PJ [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期
关键词：
D O I：
10.1063/1.1606105
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a study of the morphology and composition of InxGa1-xN/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have employed high-resolution transmission electron microscopy, energy dispersive x-ray analysis, and scanning transmission electron microscopy. Microstructural analysis was performed to investigate the dynamical effects of electron-beam irradiation on the relative indium distribution within the quantum wells. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of similar to100 pA/cm(2), was found to induce significant nanoclustering of indium within the multiple-quantum wells. These findings highlight the need for caution when reporting the presence of indium-rich clusters within InGaN/GaN multiple-quantum wells studied in the transmission electron microscope. (C) 2003 American Institute of Physics.
引用
收藏
页码：1965 / 1967
页数：3
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