Quantum cascade electroluminescence in GaAs/AlGaAs structures

被引:6
作者
Kruck, P [1 ]
Strasser, G
Helm, M
Hvozdara, L
Gornik, E
机构
[1] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
[2] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria
来源
PHYSICA E | 1998年 / 2卷 / 1-4期
基金
奥地利科学基金会;
关键词
electroluminescence; semiconductor quantum wells; unipolar semiconductor laser; light-emitting diode;
D O I
10.1016/S1386-9477(98)00092-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The operation of a unipolar quantum cascade light-emitting diode based on the material system GaAs/AlGaAs is reported. The LED operates at a wavelength of 6.9 mu m. Detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm(2) the optical output power lies in the ten 10 nW range. Additional absorption and photocurrent measurements provide a complete characterization of the mid-infrared emitter. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:449 / 452
页数:4
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