The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes

被引：0

作者：

Plank, NOV ^{[1
]}

Jiang, LD ^{[1
]}

Gundlach, AM ^{[1
]}

Cheung, R ^{[1
]}

机构：

[1] Univ Edinburgh, Scottish Microelect Ctr, Edinburgh EH9 3JF, Midlothian, Scotland

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

ICP etching; ideality factor; Schottky diodes; silicon carbide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sputtered nickel Ohmic contacts have been successfully produced on 4H-SiC substrates. The (Ohmic) contact resistances are seen to improve from R-C=2.7x10(9)Omega, to R-C=4.56Omega after annealing at 1000degreesC in N-2 atmosphere. Schottky diodes were produced on the silicon carbide (SiC) surface after etching in an SF6/O-2 inductively coupled plasma (ICP) for 3 minutes at varying substrate bias voltages. The ideality factors of all diodes formed onto the etched surfaces increased in comparison to the control sample. The highest ideality factor was observed for the diodes produced after etching at -0V and -245V bias voltage. A two diode and resistor model was applied to the results which successfully accounted for the excess leakage paths.

引用

页码：689 / 692

页数：4

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