Carrier transport and related phenomena in nanosize periodic silicon/insulator structures

被引：13

作者：

Berashevich, JA ^{[1
]}

Danilyuk, AL ^{[1
]}

Kholod, AN ^{[1
]}

Borisenko, VE ^{[1
]}

机构：

[1] Belarussian State Univ Informat & Radioelect, Minsk 220013, BELARUS

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 101卷 / 1-3期

关键词：

carrier transport via traps; tunnel-resonant transfer; electroluminescence; periodic silicon/insulator nanostructures;

D O I：

10.1016/S0921-5107(02)00664-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental facts and theoretical models describing mechanisms of carrier transport across silicon/insulator quantum wells are reviewed. Single and multi quantum wells (MQW) formed in periodic Si/CaF2 and Si/SiO2 nanostructures are mainly covered. Carrier traps in the barrier material (CaF2, SiO2) are shown to have dramatic influence on electron and hole tunneling through the barriers. When the carrier energy coincides with local trap levels, the carrier transport gets the resonant character, otherwise the effects caused by charging of the traps dominate. As a result, a region of negative differential resistance (NDR) and memory (hysteresis) effect become typical for I-V curves of the structures. Intensity of electroluminescence is shown to be mediated by the competition between radiative recombination and non-radiative Auger processes in the wells. Novel applications of periodic quantum well nanostructures are considered. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：111 / 118

页数：8

共 23 条

[1]

BERASHEVICH JA, 2002, SEMICONDUCTORS, V36, P718

[2] Injection excitation of luminescence in multilayer nc-Si/insulator structures [J].

Berashevich, YA ;

Kamenev, BV ;

Borisenko, VE .

SEMICONDUCTORS, 2002, 36 (02) :213-218

[3] Charge effects controlling the current hysteresis and negative differential resistance in periodic nanodimensional structures Si/CaF2 [J].

Berashevich, YA ;

Danilyuk, AL ;

Kholod, AN ;

Borisenko, VE .

SEMICONDUCTORS, 2002, 36 (01) :85-90

[4] Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps [J].

Berashevich, YA ;

Danilyuk, AL ;

Kholod, AN ;

Borisenko, VE .

SEMICONDUCTORS, 2001, 35 (01) :112-116

[5] QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J].

CAPASSO, F ;

SEN, S ;

BELTRAM, F ;

LUNARDI, LM ;

VENGURLEKAR, AS ;

SMITH, PR ;

SHAH, NJ ;

MALIK, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2065-2082

[6] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[7] SURFACE ELECTRONIC-STRUCTURE OF SILICON DIOXIDE [J].

CIRACI, S ;

ELLIALTIOGLU, S .

PHYSICAL REVIEW B, 1982, 25 (06) :4019-4030

[8] PROBING THE CAF2 DENSITY-OF-STATES AT AU/CAF2/N-SI(111) INTERFACES WITH PHOTOELECTRON-SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

CUBERES, MT ;

BAUER, A ;

WEN, HJ ;

PRIETSCH, M ;

KAINDL, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2646-2652

[9]

DUKE CB, 1969, SOLID PHYSICS S, V10

[10] Grain effect in electronic properties of silicon epitaxial nanostructures [J].

Filonov, AB ;

Kholod, AN ;

Borisenko, VE ;

Saul, A ;

Bassani, F ;

d'Avitaya, FA .

COMPUTATIONAL MATERIALS SCIENCE, 1998, 10 (1-4) :148-153

← 1 2 3 →