Micro-photoluminescence spectroscopy on heavily-doped layers of silicon solar cells

被引：27

作者：

Nguyen, Hieu T. ^{[1
]}

Yan, Di ^{[1
]}

Wang, Fan ^{[2
]}

Zheng, Peiting ^{[1
]}

Han, Young ^{[1
]}

Macdonald, Daniel ^{[1
]}

机构：

[1] Australian Natl Univ, Coll Engn & Comp Sci, Res Sch Engn, Canberra, ACT 2601, Australia

[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 04期

基金：

澳大利亚研究理事会;

关键词：

band gaps; crystals; silicon; doping; photoluminescence; solar cells; P-TYPE SILICON; CRYSTALLINE SILICON; BAND-GAP; RADIATIVE RECOMBINATION; TEMPERATURE-DEPENDENCE; LUMINESCENCE; COEFFICIENT; WAFERS;

D O I：

10.1002/pssr.201510049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report and explain the photoluminescence spectra emitted from silicon solar cells with heavily-doped layers at the surface. A micro-photoluminescence spectroscopy system is employed to investigate the total spectrum emitted from both the heavily-doped layer and the silicon substrate with micron-scale spatial resolution. The two regions of the device give rise to separate photoluminescence peaks, due to band-gap narrowing effects in the highly-doped layer. Two key parameters, the absorption depth of the excitation wavelength, and the sample temperature, are shown to be critical to reveal the separate signatures from the two regions. Finally, this technique is applied to locally diffused and laser-doped regions on silicon solar cell pre-cursors, demonstrating the potential value of this micron-scale technique in studying and optimizing locally doped regions. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：230 / 235

页数：6

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