Improved PECVD processed hydrogenated germanium films through temperature induced densification

被引：7

作者：

de Vrijer, Thierry ^{[1
]}

van Dingen, Julian E. C. ^{[1
]}

Roelandschap, Paul J. ^{[1
]}

Roodenburg, Koos ^{[1
]}

Smets, Arno H. M. ^{[1
]}

机构：

[1] Delft Univ Technol, Photovolta Mat & Devices, Mekelweg 4, NL-2628 CD Delft, Netherlands

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 138卷

关键词：

PECVD; Amorphous germanium; Hydrogenated germanium; Temperature densification; Thin film; Chemical stability; REFRACTIVE-INDEX; SILICON-OXIDE; ELECTRONIC-PROPERTIES; AMORPHOUS-GERMANIUM; GLOW-DISCHARGE; THIN-FILMS; DENSITY; GE; DEPOSITION; SURFACE;

D O I：

10.1016/j.mssp.2021.106285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous and nano-crystalline germanium is of potential interest for a wide range of electronic, optical, optoelectronic and photovoltaic applications. In this work the influence of deposition temperature on hydrogenated germanium (Ge:H) films was characterized, using over 200 Ge:H and over 70 SiGe:H films. The demonstrated temperature-induced densification of Ge:H films resulted in more stable films with a lower bandgap energy and dark conductivity and higher activation energy.

引用

页数：7

共 36 条

[1] The perspectives of hydrogenated amorphous germanium as an electronic material [J].

Chambouleyron, I ;

Graeff, CF ;

Zanatta, AR ;

Fajardo, F ;

Mulato, M ;

Campomanes, R ;

Comedi, D ;

Marques, FC .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 192 (02) :241-251

[2] Silicon Filaments in Silicon Oxide for Next-Generation Photovoltaics [J].

Cuony, Peter ;

Alexander, Duncan T. L. ;

Perez-Wurfl, Ivan ;

Despeisse, Matthieu ;

Bugnon, Gregory ;

Boccard, Mathieu ;

Soederstroem, Thomas ;

Hessler-Wyser, Aicha ;

Hebert, Cecile ;

Ballif, Christophe .

ADVANCED MATERIALS, 2012, 24 (09) :1182-1186

[3]

de Vrijer T., 2021, IEEE J PHOTOVOLT, P1, DOI [10.1109/JPHOTOV.2021. 3059940, DOI 10.1109/JPHOTOV.2021.3059940]

[4] An expedient semi-empirical modelling approach for optimal bandgap profiling of stoichiometric absorbers: A case study of thin film amorphous silicon germanium for use in multijunction photovoltaic devices [J].

de Vrijer, Thierry ;

Parasramka, Harsh ;

Roerink, Steven J. ;

Smets, Arno H. M. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2021, 225

[5] The impact of processing conditions and post-deposition oxidation on the opto-electrical properties of hydrogenated amorphous and nano-crystalline Germanium films [J].

de Vrijer, Thierry ;

Ravichandran, Ashwath ;

Bouazzata, Bilal ;

Smets, Arno H. M. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2021, 553

[6] Chemical Stability and Performance of Doped Silicon Oxide Layers for Use in Thin-Film Silicon Solar Cells [J].

de Vrijer, Thierry ;

Si, Fai Tong ;

Ta, Hairen ;

Smets, Arno Hendrikus Marie .

IEEE JOURNAL OF PHOTOVOLTAICS, 2019, 9 (01) :3-11

[7]

Dieter Mergel D. M., 2010, Chin. Opt. Lett, V8, P67

[8]

EBERHARDT K, 1993, J NON-CRYST SOLIDS, V164, P19, DOI 10.1016/0022-3093(93)90482-D

[9]

Johnson E.V., 2007, MRS P, V989, DOI [10.1557/PROC-0989-A04-04, DOI 10.1557/PROC-0989-A04-04]

[10] INFLUENCE OF PLASMA DEPOSITION ON STRUCTURAL AND ELECTRONIC-PROPERTIES OF A-GE-H [J].

KARG, FH ;

BOHM, H ;

PIERZ, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :477-479

← 1 2 3 4 →