A High-Efficiency 28 GHz/39 GHz Dual-Band Power Amplifier MMIC for 5G Communication

被引：13

作者：

Xie, Heng ^{[1
]}

Cheng, Yu Jian ^{[1
]}

Ding, Yan Ran ^{[1
]}

Wang, Lei ^{[1
]}

Fan, Yong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, EHF Key Lab Fundamental Sci, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Dual band; GaAs; high efficiency; millimeter-wave; power amplifier (PA); DESIGN;

D O I：

10.1109/LMWC.2021.3095659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-efficiency 28 GHz/39 GHz concurrent dual-band power amplifier (PA) is proposed using the 90 nm GaAs pseudomorphic high-electron mobility transistor (pHEMT) process for the millimeter-waveband fifth generation (5G) communication application in this letter. Its high efficiency is achieved by adopting a low-loss dual-band output matching network (OMN) and employing a large power push ratio (3:1) for the driver stage and the output stage under the same bias voltage. The dual-band PA has the measured gain of 19.1 and 20.3 dB, as well as the power added efficiency (PAE) of 51.3% with the 23.8-dBm output power and 49.5% with the 23.7-dBm output power at the 3 dB compression point (P-3dB), at 29.6 and 39 GHz, respectively. The area of the proposed dual-band PA is 1.45 mm x 1.2 mm including pads.

引用

收藏

页码：1227 / 1230

页数：4

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