Development of Ultrahigh-Voltage SiC Devices

被引：71

作者：

Fukuda, Kenji ^{[1
]}

Okamoto, Dai ^{[1
]}

Okamoto, Mitsuo ^{[1
]}

Deguchi, Tadayoshi ^{[1
]}

Mizushima, Tomonori ^{[1
]}

Takenaka, Kensuke ^{[1
]}

Fujisawa, Hiroyuki ^{[1
]}

Harada, Shinsuke ^{[1
]}

Tanaka, Yasunori ^{[1
]}

Yonezawa, Yoshiyuki ^{[1
]}

Kato, Tomohisa ^{[1
]}

Katakami, Shuji ^{[2
]}

Arai, Manabu ^{[2
]}

Takei, Manabu ^{[3
]}

Matsunaga, Shinichiro ^{[3
]}

Takao, Kazuto ^{[4
]}

Shinohe, Takashi ^{[4
]}

Izumi, Toru ^{[5
]}

Hayashi, Toshihiko ^{[5
]}

Ogata, Syuuji ^{[5
]}

Asano, Katsunori ^{[5
]}

Okumura, Hajime ^{[1
]}

Kimoto, Tsunenobu ^{[6
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] New Japan Radio Co Ltd, Fujimino 3568510, Japan

[3] Fuji Elect Co Ltd, Corp Res & Dev, Tokyo 1918502, Japan

[4] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan

[5] Kansai Elect Power Co Inc, Power Engn Res & Dev Ctr, Amagasaki, Hyogo 6610974, Japan

[6] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期

基金：

日本学术振兴会;

关键词：

n-type insulated-gate bipolar transistors (IGBTs); p-i-n; p-type IGBTs; package technology; silicon carbide (SiC); switching test; ultrahigh voltage; 4H-SIC PIN DIODES; HIGH-TEMPERATURE;

D O I：

10.1109/TED.2014.2357812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrahigh-voltage silicon carbide (SiC) devices [p-i-n diodes and insulated-gate bipolar transistors (IGBTs)] and switching test have been investigated. As a result, we have succeeded in developing a 13-kV p-i-n diode, 15-kV p-channel IGBT, and 16-kV flip-type n-channel implantation and epitaxial IGBT with a low differential specific on-resistance (R-diff,R-on). It was revealed that a power module fabricated using a nanotech resin, Si3N4 ceramic substrate, and W base plate was suitable for ultrahigh voltage and high temperature. A switching test was carried out using a clamped inductive load circuit, which indicated that the energy loss of a circuit with ultrahigh-voltage SiC devices is lower than that of Si devices.

引用

页码：396 / 404

页数：9

共 16 条

[1] Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings [J].

Cheng, Lin ;

Palmour, John W. ;

Agarwal, Anant K. ;

Allen, Scott T. ;

Brunt, Edward V. ;

Wang, Gangyao ;

Pala, Vipindas ;

Sung, Woongje ;

Huang, Alex Q. ;

O'Loughlin, Michael ;

Burk, Albert ;

Grider, Dave ;

Scozzie, Charles .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :1089-+

[2] Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-channel IGBTs [J].

Deguchi, Tadayoshi ;

Katakami, Shuji ;

Fujisawa, Hiroyuki ;

Takenaka, Kensuke ;

Ishimori, Hitoshi ;

Takasu, Shinji ;

Takei, Manabu ;

Arai, Manabu ;

Yonezawa, Yoshiyuki ;

Fukuda, Kenji ;

Okumura, Hajime .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :1038-1041

[3]

HARADA S, 2006, IEDM, P903, DOI DOI 10.1109/IEDM.2006.346929

[4] Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices [J].

Hayashi, Toshihiko ;

Izumi, Toru ;

Hemmi, Tetsuro ;

Asano, Katsunori .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :1036-1039

[5] Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-high Blocking Voltage SiC Devices [J].

Izumi, T. ;

Hemmi, T. ;

Hayashi, T. ;

Asano, K. .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :669-672

[6]

Kadavelugu A, 2014, INT CONF POW ELECTR, P3726, DOI 10.1109/IPEC.2014.6870034

[7] Fabrication of a P-channel SiC-IGBT with High Channel Mobility [J].

Katakami, S. ;

Fujisawa, H. ;

Takenaka, K. ;

Ishimori, H. ;

Takasu, S. ;

Okamoto, M. ;

Arai, M. ;

Yonezawa, Y. ;

Fukuda, K. .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :958-961

[8] 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension [J].

Niwa, Hiroki ;

Suda, Jun ;

Kimoto, Tsunenobu .

APPLIED PHYSICS EXPRESS, 2012, 5 (06)

[9] 13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications [J].

Okamoto, Dai ;

Tanaka, Yasunori ;

Mizushima, Tomonori ;

Yoshikawa, Mitsuru ;

Fujisawa, Hiroyuki ;

Takenaka, Kensuke ;

Harada, Shinsuke ;

Ogata, Shuji ;

Hayashi, Toshihiko ;

Izumi, Toru ;

Hemmi, Tetsuro ;

Tanaka, Atsushi ;

Nakayama, Koji ;

Asano, Katsunori ;

Matsumoto, Kazushi ;

Ohse, Naoyuki ;

Ryo, Mina ;

Ota, Chiharu ;

Takao, Kazuto ;

Mizukami, Makoto ;

Kato, Tomohisa ;

Takei, Manabu ;

Yonezawa, Yoshiyuki ;

Fukuda, Kenji ;

Okumura, Hajime .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :855-+

[10] Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates [J].

Okamoto, Dai ;

Tanaka, Yasunori ;

Matsumoto, Norio ;

Mizukami, Makoto ;

Ota, Chiharu ;

Takao, Kazuto ;

Fukuda, Kenji ;

Okumura, Hajime .

SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 :907-+

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