Tight-binding modeling of charge migration in DNA devices

被引：58
作者：
Cuniberti, G. [1 ]
Macia, E. [2 ]
Rodriguez, A. [3 ]
Romer, R. A. [4 ]
机构：
[1] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
[2] Univ Complutense Madrid, Dept Fis Mat, E-28040 Madrid, Spain
[3] UPM, Dpto Matemat Aplicada & Estadist, EUIT Aeronaut, Madrid 28040, Spain
[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
CHARGE MIGRATION IN DNA: PERSPECTIVES FROM PHYSICS, CHEMISTRY, AND BIOLOGY | 2007年
基金：
英国工程与自然科学研究理事会;
关键词：
METAL-INSULATOR-TRANSITION; SIZE-SCALING APPROACH; ELECTRON-TRANSFER; IONIZATION-POTENTIALS; CONDUCTANCE FORMULA; DOUBLE-STRAND; TRANSPORT; LOCALIZATION; MOLECULES; BEHAVIOR;
D O I：
10.1007/978-3-540-72494-0_1
中图分类号：
Q [生物科学];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：1 / +
页数：6
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