EPR g factors and tetragonal distortion for the isoelectronic Ni+ and Cu2+ centers in the CuGaSe2 crystal

被引:21
作者
Feng, W. L. [1 ,3 ,5 ]
Li, X. M. [1 ]
Zheng, W. C. [2 ,5 ]
Yang, Y. G. [2 ]
Yang, W. Q. [4 ]
机构
[1] Chongqing Univ, Coll Optoelect Engn, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China
[2] Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
[3] Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China
[4] Chengdu Univ Informat & Technol, Dept Opt & Elect, Chengdu 610225, Peoples R China
[5] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
基金
美国国家科学基金会;
关键词
Electron paramagnetic resonance; Crystal- and ligand-field theory; Defect structure; Ni+; Cu2+; CuGaSe2; ELECTRON-PARAMAGNETIC-RESONANCE; ATOMIC SCREENING CONSTANTS; SOLAR-CELLS; DEFECT STRUCTURES; SCF FUNCTIONS; THIN-FILMS; IONS; TRANSITION; PARAMETERS; SPECTRA;
D O I
10.1016/j.jmmm.2010.10.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The EPR g factors, g(parallel to) and g(perpendicular to), for the isoelectronic 3d(9) ions Ni+ and Cu2+ at the tetragonal Cu+ site of the CuGaSe2 crystal are calculated from the high-order perturbation formulas based on a two-spin-orbit-parameter model. In the model, both the contributions to g factors from the spin-orbit parameter of central 3d(9) ion and that of ligand ion are contained. The calculated results appear to be consistent with the experimental values. The tetragonal distortions (characterized by theta - theta(0), where theta is the angle between the metal-ligand bond and C-4 axis, and theta(0)approximate to E54.74 degrees is the same angle in cubic symmetry) of Ni+ and Cu2+ centers, which are different from the corresponding angle in the host CuGaSe2 crystal and from impurity to impurity, are obtained from the calculations. The difference of the sign of g(parallel to) - g(perpendicular to) between the isoelectronic Ni+ and Cu2+ centers is found to be due to the different tetragonal distortions of both centers in the CuGaSe2 crystal. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:528 / 531
页数:4
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