Insulators with high stability for electroluminescent devices

被引：13

作者：

Lim, JW ^{[1
]}

Yun, SJ ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Informat Display Device Team, Basic Res Lab, Taejon 305350, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 6B期

关键词：

AION; PEALD; TFEL; insulator; dielectric breakdown;

D O I：

10.1143/JJAP.42.L663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum oxinitride film fabricated by Plasma-enhanced atomic layer deposition (PEALD) was found to possess a large breakdown field, which is necessary for the stable operation of thin film electroluminescent (TFEL) devices. Moreover, aluminum oxinitride is more stable than aluminum oxide films grown by PEALD or by ALD after a postannealing process, which is inevitably required to improve the luminance property of phosphor. Furthermore, aluminum oxinitride films were applied to insulators of ZnS:Mn as well as a ZnS:Tb TFEL device. Resultantly, they show superb stability under a high electric field.

引用

页码：L663 / L665

页数：3

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